abstract
- © 2020 Elsevier B.V.In this paper we present a study on electron states in a double quantum well wire with asymmetrical barriers, also emission spectra are analyzed for a process of electron Raman scattering in this system, for which we calculate the differential cross section. The model we use considers the system to be at a temperature of T=0K and the presence of a single electron in the conduction band. In addition, the conduction band is assumed to be parabolic, which splits into a system of sub-bands due to confinement. On the other hand, in this work we study the net Raman gain of the system, illustrating the results through the transition rate since they are directly proportional. The results obtained in this work are compared to those of previous works and we show that the net Raman gain of the double quantum well wire with asymmetrical barriers is greater than that of the step-quantum well wire, and than that of the core/shell quantum well wire, obtaining the results of these systems as limit cases. We also showed that the system studied here is slightly more efficient than the double quantum well with asymmetrical barriers. These results can be applied in the manufacture of electronic and optoelectronic devices as quantum cascade lasers.